Diffusion coefficient of selenium in indium antimonide
Identifieur interne : 000334 ( Main/Exploration ); précédent : 000333; suivant : 000335Diffusion coefficient of selenium in indium antimonide
Auteurs : RBID : ISTEX:11182_1992_Article_BF00895474.pdfAbstract
The diffusion of selenium in indium antimonide has been studied in the temperature range 400–490°C, by the method of removing layers. Two regions have been distinguished in the donor distribution profiles. The first has a low diffusion coefficient and a high surface concentration, near to the limit of solubility of selenium (∼8·1018 cm−3). In the second region, a much larger diffusion coefficient and a surface concentration lower by two orders of magnitude (∼8·1016 cm−3) with weak temperature dependence are found. The temperature dependences of the diffusion coefficients of the first and second regions can be described by the expressions: D=4.8·1013 exp(−4.1 eV/kT) cm2/sec, D2=1.9·1013 exp(−3.9 eV/kT) cm2/sec.
DOI: 10.1007/BF00895474
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Lebedeva</name><affiliation wicri:level="1"><mods:affiliation>Novgorod Polytechnical Institute, USSR</mods:affiliation><country xml:lang="fr">Russie</country><wicri:regionArea>Novgorod Polytechnical Institute</wicri:regionArea></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:11182_1992_Article_BF00895474.pdf</idno><date when="1992">1992</date><idno type="doi">10.1007/BF00895474</idno><idno type="wicri:Area/Main/Corpus">000028</idno><idno type="wicri:Area/Main/Curation">000028</idno><idno type="wicri:Area/Main/Exploration">000334</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">The diffusion of selenium in indium antimonide has been studied in the temperature range 400–490°C, by the method of removing layers. Two regions have been distinguished in the donor distribution profiles. The first has a low diffusion coefficient and a high surface concentration, near to the limit of solubility of selenium (∼8·1018 cm−3). In the second region, a much larger diffusion coefficient and a surface concentration lower by two orders of magnitude (∼8·1016 cm−3) with weak temperature dependence are found. The temperature dependences of the diffusion coefficients of the first and second regions can be described by the expressions: D=4.8·1013 exp(−4.1 eV/kT) cm2/sec, D2=1.9·1013 exp(−3.9 eV/kT) cm2/sec.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="04646a4515f4224c10d6b54b84149909b3341e0c"><titleInfo lang="eng"><title>Diffusion coefficient of selenium in indium antimonide</title></titleInfo><name type="personal"><namePart type="given">V. V.</namePart><namePart type="family">Gavrushko</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Novgorod Polytechnical Institute, USSR</affiliation></name><name type="personal"><namePart type="given">O. V.</namePart><namePart type="family">Kosogov</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Novgorod Polytechnical Institute, USSR</affiliation></name><name type="personal"><namePart type="given">V. 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The first has a low diffusion coefficient and a high surface concentration, near to the limit of solubility of selenium (∼8·1018 cm−3). In the second region, a much larger diffusion coefficient and a surface concentration lower by two orders of magnitude (∼8·1016 cm−3) with weak temperature dependence are found. The temperature dependences of the diffusion coefficients of the first and second regions can be described by the expressions: D=4.8·1013 exp(−4.1 eV/kT) cm2/sec, D2=1.9·1013 exp(−3.9 eV/kT) cm2/sec.</abstract><relatedItem type="series"><titleInfo type="abbreviated"><title>Soviet Physics Journal</title></titleInfo><titleInfo><title>Soviet Physics Journal</title><partNumber>Year: 1992</partNumber><partNumber>Volume: 34</partNumber><partNumber>Number: 11</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1991-11-01</dateIssued><copyrightDate encoding="w3cdtf">1992</copyrightDate></originInfo><subject usage="primary"><topic>Physics</topic><topic>Physics, general</topic><topic>Mathematical and Computational Physics</topic><topic>Nuclear Physics, Heavy Ions, Hadrons</topic><topic>Condensed Matter</topic><topic>Applied Optics, Optoelectronics, Optical Devices</topic></subject><identifier type="issn">0038-5697</identifier><identifier type="issn">Electronic: 1573-9228</identifier><identifier type="matrixNumber">11182</identifier><identifier type="local">IssueArticleCount: 19</identifier><recordInfo><recordOrigin>Plenum Publishing Corporation, 1992</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF00895474</identifier><identifier type="matrixNumber">Art3</identifier><identifier type="local">BF00895474</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>981</start><end>983</end></extent></part><recordInfo><recordOrigin>Plenum Publishing Corporation, 1992</recordOrigin><recordIdentifier>11182_1992_Article_BF00895474.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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